| PART |
Description |
Maker |
| AD6650ABC |
Diversity IF-to-Baseband GSM/EDGE Narrow-Band Receiver; Package: CSPBGA (12x12mm); No of Pins: 121; Temperature Range: Industrial TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PBGA121
|
Analog Devices, Inc.
|
| AD6650BBC1 AD6650PCB |
Diversity IF to Baseband GSM/EDGE Narrowband Receiver 多样性IF到基带的GSM / EDGE窄带接收
|
Analog Devices, Inc.
|
| AD6421AST AD6422AST AD6423 AD20MSP415 |
DIODE ZENER 5.6V 500MW
GSM/DCS1800/PCS1900 Baseband Processing Chipset
|
ANALOG DEVICES INC
AD[Analog Devices]
|
| ADRF6510 |
An IQ Demodulator-Based IF-to-Baseband Receiver with IF and Baseband Variable Gain and Programmable Baseband Filtering
|
Analog Devices
|
| SI4205-BM E-GSM900 GSM850 SI4205-BMR DCS1800 |
TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, BGA32 8 X 8 MM, LGA-32
Single 8x8 mm package CMOS process technology Intergrated GSM/GPRS transceiver including
|
Silicon Laboratories, Inc.
|
| CX80502-38 CX80502-33 CX80502-34 CX80502-35 CX8050 |
CX805-30 Baseband Processor for Multiband GSM and GPRS Applications
|
SKYWORKS[Skyworks Solutions Inc.]
|
| MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BCM4328 BCM2153 BCM59001 BCM2048 |
SINGLE CHIP IEEE 802.11a/b/g MAC/BASEBAND/RADIO WITH INTEGRATED BLUETOOTH 2.1 EDR AND FM RECEIVER FOR LOW-POWER MOBILE HANDSET
7.2-MBPS HEDGE 65-nm MULTIMEDIA BASEBAND PROCESSOR
|
BOARDCOM[Broadcom Corporation.]
|
| MRF18030BLSR3 MRF18030BSR3 MRF18030BR3 MRF18030BLR |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
